Mechanically stable diffusion barrier stack and method for fabricating the same

摘要

A mechanically stable diffusion barrier stack structure and method of fabricating the same is disclosed. The diffusion barrier stack structure having a molybdenum nitride layer deposited on a molybdenum layer and operates to prevent diffusion between a semiconductor layer and a metal interconnect. The method for fabricating includes depositing a molybdenum layer outwardly from the semiconductor layer in a deposition chamber, and depositing a molybdenum nitride layer outwardly from the molybdenum layer in the deposition chamber.