ELECTROPLATING METHODS AND CHEMISTRIES FOR CIGS PRECURSOR STACKS WITH CONDUCTIVE SELENIDE BOTTOM LAYER

摘要

The present invention provides a method and precursor structure to form a solar cell absorber layer. The method includes forming a CIGS solar cell absorber on a base by depositing a first layer on the base, where in the first layer includes non-crystalline copper-selenide that is electrically nonconductive, and then heat treating the first layer at a first temperature range to transform the non-crystalline copper-selenide into a crystalline copper-selenide that is electrically conductive, thereby ensuring that the first layer becomes a first conductive layer. Thereafter, other steps follow to complete formation of the CIGS solar cell absorber.