Controlling agglomerated point defect and oxygen cluster formation induced by the lateral surface of a silicon single crystal during CZ growth

摘要

Processes for preparing a single crystal silicon ingot are disclosed. In certain embodiments, the processes involve controlling (1) a growth velocity, v, of the ingot as well as (2) an average axial temperature gradient, G, a corrected average axial temperature gradient, G_corrected, or an effective average axial temperature gradient, G_effective, during the growth of at least a segment of the constant diameter portion of the ingot.