首页> 外国专利> Current-perpendicular-to-plane (CPP) read sensor with ferromagnetic amorphous buffer and polycrystalline seed layers

Current-perpendicular-to-plane (CPP) read sensor with ferromagnetic amorphous buffer and polycrystalline seed layers

机译:具有铁磁非晶缓冲液和多晶种子层的电流垂直平面(CPP)读取传感器

摘要

A current-perpendicular-to-plane (CPP) tunneling magnetoresistance (TMR) or giant magnetoresistance (GMR) read sensor with ferromagnetic amorphous buffer and polycrystalline seed layers is disclosed for reducing a read gap, in order to perform magnetic recording at higher linear densities. The ferromagnetic amorphous buffer and polycrystalline seed layers couples to a ferromagnetic lower shield, thus acting as part of the ferromagnetic lower shield and defining the upper surface of the ferromagnetic polycrystalline seed layer as the lower bound of the read gap. In addition, a CPP TMR or GMR read sensor with nonmagnetic and ferromagnetic cap layers is also disclosed for reducing the read gap, in order to perform magnetic recording at even higher linear densities. The ferromagnetic cap layer couples to a ferromagnetic upper shield, thus acting as part of the ferromagnetic upper shield and defining the lower surface of the ferromagnetic cap layer as the upper bound of the read gap.
机译:公开了一种具有铁磁非晶缓冲层和多晶种子层的电流垂直平面(CPP)隧穿磁阻(TMR)或巨磁阻(GMR)读传感器,用于减小读间隙,以便在更高的线性密度下执行磁记录。铁磁非晶缓冲层和多晶种子层耦合到铁磁下屏蔽层,因此充当铁磁下屏蔽层的一部分,并将铁磁多晶种子层的上表面定义为读取间隙的下限。另外,还公开了具有非磁性和铁磁性盖层的CPP TMR或GMR读取传感器,用于减小读取间隙,以便以更高的线性密度执行磁记录。铁磁盖层耦合到铁磁上屏蔽层,从而充当铁磁上屏蔽层的一部分,并将铁磁盖层的下表面定义为读取间隙的上限。

著录项

  • 公开/公告号US8169753B2

    专利类型

  • 公开/公告日2012-05-01

    原文格式PDF

  • 申请/专利权人 TSANN LIN;

    申请/专利号US20080276003

  • 发明设计人 TSANN LIN;

    申请日2008-11-21

  • 分类号G11B5/39;

  • 国家 US

  • 入库时间 2022-08-21 17:26:55

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