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Insulated gate bipolar transistor (IGBT) with monolithic deep body clamp diode to prevent latch-up
Insulated gate bipolar transistor (IGBT) with monolithic deep body clamp diode to prevent latch-up
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机译:带单片深体钳位二极管的绝缘栅双极晶体管(IGBT)可防止闩锁
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摘要
A trench insulation gate bipolar transistor (IGBT) power device with a monolithic deep body clamp diode comprising a plurality of trench gates surrounded by emitter regions of a first conductivity type near a top surface of a semiconductor substrate of the first conductivity type encompassed in base regions of a second conductivity type. A collector region of the second conductivity type is disposed on a rear side opposite from the top surface of the semiconductor substrate corresponding to and underneath the trench gates surrounded by the emitter regions encompassed in the base regions constituting a plurality of insulation gate bipolar transistors (IGBTs). A deep dopant region of the second conductivity type having P-N junction depth deeper than the base region is disposed between and extending below the trench gates in the base region of the first conductivity type.
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