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High power and high temperature semiconductor power devices protected by non-uniform ballasted sources
High power and high temperature semiconductor power devices protected by non-uniform ballasted sources
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机译:受非均匀镇流电源保护的高功率和高温半导体功率器件
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摘要
A semiconductor power device is formed on a semiconductor substrate. The semiconductor power device includes a plurality of transistor cells distributed over different areas having varying amount of ballasting resistances depending on a local thermal dissipation in each of the different areas. An exemplary embodiment has the transistor cells with a lower ballasting resistance formed near a peripheral area and the transistor cells having a higher ballasting resistance are formed near a bond pad area. Another exemplary embodiment comprises cells with a highest ballasting resistance formed in an area around a wire-bonding pad, the transistor cells having a lower resistance are formed underneath the wire-bonding pad connected to bonding wires for dissipating heat and the transistor cells having a lowest ballasting resistance are formed in an areas away from the bonding pad.
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