首页> 外文期刊>IEEE Transactions on Industry Applications >Power loss and junction temperature analysis of power semiconductor devices
【24h】

Power loss and junction temperature analysis of power semiconductor devices

机译:功率半导体器件的功率损耗和结温分析

获取原文
获取原文并翻译 | 示例
       

摘要

A newly developed electrothermal calculation method is implemented to estimate the power loss and working temperature of insulated gate bipolar transistor (IGBT) devices. Based on the measurement of the IGBT's characteristics, the exact estimation of power loss considering the junction temperature is introduced. Then, the thermal network is used to calculate the working temperature. The comparison between experimental and calculation results shows that this method is effective as a designing step with only the time-domain voltage and current data obtained from simulation results.
机译:实施了一种新开发的电热计算方法,以估算绝缘栅双极晶体管(IGBT)器件的功率损耗和工作温度。基于对IGBT特性的测量,引入了考虑结温的功率损耗的精确估算。然后,将热网络用于计算工作温度。实验结果与计算结果的比较表明,该方法作为设计步骤是有效的,仅从仿真结果中获得时域电压和电流数据。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号