首页> 外国专利> Methods of fabricating a polycrystalline diamond compact including a pre-sintered polycrystalline diamond table having a thermally-stable region

Methods of fabricating a polycrystalline diamond compact including a pre-sintered polycrystalline diamond table having a thermally-stable region

机译:制备包括具有热稳定区域的预烧结多晶金刚石台的多晶金刚石压块的方法

摘要

In an embodiment, a method of fabricating a polycrystalline diamond compact includes forming an assembly including an at least partially leached polycrystalline diamond table that includes a plurality of interstitial regions therein and a surface; at least one silicon-containing layer positioned adjacent to the surface of the at least partially leached polycrystalline diamond table; and a substrate positioned at least proximate to the at least partially leached polycrystalline diamond table. The method further includes subjecting the assembly to a high-pressure/high-temperature process; at least partially infiltrating the at least partially leached polycrystalline diamond table with the at least one silicon-containing layer, in response to the high-pressure/high-temperature process, to form an at least partially infiltrated polycrystalline diamond table that bonds to the substrate; and exposing the at least partially infiltrated polycrystalline diamond table to an acid such that at least a thermal stability thereof is enhanced.
机译:在一个实施例中,一种制造多晶金刚石压块的方法包括形成组件,该组件包括至少部分浸出的多晶金刚石工作台,该多晶金刚石工作台在其中包括多个间隙区域和表面。与至少部分浸出的多晶金刚石台面相邻的至少一层含硅层;至少定位在至少部分浸出的多晶金刚石台附近的衬底。该方法还包括对组件进行高压/高温处理;响应于高压/高温过程,利用至少一个含硅层至少部分地渗透至少部分浸出的多晶金刚石台,以形成结合到基底上的至少部分渗透的多晶金刚石台。 ;使至少部分渗透的多晶金刚石工作台暴露于酸,从而至少提高其热稳定性。

著录项

  • 公开/公告号US8071173B1

    专利类型

  • 公开/公告日2011-12-06

    原文格式PDF

  • 申请/专利权人 MOHAMMAD N. SANI;

    申请/专利号US20090363104

  • 发明设计人 MOHAMMAD N. SANI;

    申请日2009-01-30

  • 分类号E21B10/46;B24D3/04;

  • 国家 US

  • 入库时间 2022-08-21 17:25:48

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