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Methods for planarizing unevenness on surface of wafer photoresist layer and wafers produced by the methods

机译:使晶片光致抗蚀剂层表面上的不平坦度平坦化的方法以及通过该方法生产的晶片

摘要

A wafer has a substrate and a photoresist layer thereon with a surface that is planarized by positioning over a starting surface of the photoresist layer a gray-scale mask having a pattern that correlates with a gradient height profile of unevenness present on the starting surface, patterning the photoresist layer using the gray-scale mask to produce the pattern thereof in the photoresist layer which, in effect, produces a profile of evenness in the photoresist layer underlying the gradient height profile of unevenness, and developing the patterned photoresist layer such that only a three-dimensional portion thereof corresponding to the gradient height profile of unevenness located above the profile of evenness is removed which, in effect, leaves behind a resulting surface on the photoresist layer made substantially more even and thus substantially in a planarized condition.
机译:晶片具有衬底和在其上的光致抗蚀剂层,该光致抗蚀剂层的表面通过在光致抗蚀剂层的起始表面上定位而被平坦化,该灰度掩模具有图案,该图案与存在于该起始表面上的不均匀性的梯度高度分布相关,图案化。使用灰度掩模在光致抗蚀剂层上产生其图案,该图案实际上在不均匀性的梯度高度分布下方的光致抗蚀剂层中产生均匀分布,并显影图案化的光致抗蚀剂层,使得仅去除了对应于位于均匀度轮廓上方的不均匀度的梯度高度轮廓的三维部分,其实际上在光致抗蚀剂层上留下了形成为基本上更均匀并因此基本上处于平坦化状态的所得表面。

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