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Phase change memory device accounting for volume change of phase change material and method for manufacturing the same
Phase change memory device accounting for volume change of phase change material and method for manufacturing the same
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机译:考虑相变材料的体积变化的相变存储器件及其制造方法
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摘要
A phase change memory device includes a silicon substrate including a plurality of active regions which extend in a first direction and are arranged at regular intervals in a second direction perpendicular to the first direction. Switching elements are formed in each active region of the silicon substrate and are spaced apart from one another. Phase change patterns are formed in the second direction and have the shape of lines in such that the phase change patterns connect side surfaces of pairs of switching elements which are placed adjacent to each other in a direction diagonal to the first direction.
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