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DRIVE CURRENT ADJUSTMENT FOR TRANSISTORS FORMED IN THE SAME ACTIVE REGION BY LOCALLY PROVIDING EMBEDDED STRAIN INDUCING SEMICONDUCTOR MATERIAL IN THE ACTIVE REGION
DRIVE CURRENT ADJUSTMENT FOR TRANSISTORS FORMED IN THE SAME ACTIVE REGION BY LOCALLY PROVIDING EMBEDDED STRAIN INDUCING SEMICONDUCTOR MATERIAL IN THE ACTIVE REGION
The drive current capability of a pull-down transistor and a pass transistor formed in a common active region may be adjusted on the basis of different strain levels obtained by providing at least one embedded semiconductor alloy in the active region, thereby providing for a simplified overall geometric configuration of the active region. Hence, static RAM cells may be formed on the basis of a minimum channel length with a simplified configuration of the active region, thereby avoiding significant yield losses as may be observed in sophisticated devices, in which a pronounced variation of the transistor width is conventionally used so as to adjust the ratio of the drive currents for the pull-down and pass transistors. FIG.2
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