首页> 外国专利> METHOD OF MAKING FRONT ELECTRODE OF PHOTOVOLTAIC DEVICE HAVING ETCHED SURFACE AND CORRESPONDING PHOTOVOLTAIC DEVICE

METHOD OF MAKING FRONT ELECTRODE OF PHOTOVOLTAIC DEVICE HAVING ETCHED SURFACE AND CORRESPONDING PHOTOVOLTAIC DEVICE

机译:使具有凹凸不平表面的光电装置的前电极和对应的光电装置的制造方法

摘要

Certain example embodiments of this invention relate to a photovoltaic (PV) device including an electrode such as a front electrode/contact, and a method of making the same. In certain example embodiments, the front electrode has a textured (e.g., etched) surface that faces the photovoltaic semiconductor film of the PV device. The front electrode has a transparent conductive oxide (TCO) film having first and second layers (continuous or discontinuous) of the same material (e.g., zinc oxide, zinc aluminum oxide, indium-tin-oxide, or tin oxide), where the first TCO layer is sputter-deposited using a ceramic sputtering target(s) and the second TCO layer of the same material is sputter-deposited using a metallic or substantially metallic sputtering target(s). This allows the better quality TCO of the film, deposited more slowly via the ceramic target(s), to be formed using the ceramic target and the lesser quality TCO of the film to be deposited more quickly and cost effectively via the metallic target(s). After the etching, most or all of the better quality ceramic-deposited TCO remains whereas much of the lesser quality metallic-deposited TCO of the film was removed during the etching process.
机译:本发明的某些示例实施例涉及一种包括电极(例如前电极/触点)的光伏(PV)装置及其制造方法。在某些示例实施例中,前电极具有面向PV器件的光伏半导体膜的纹理化(例如,蚀刻)表面。前电极具有透明导电氧化物(TCO)膜,该膜具有相同材料的第一层和第二层(连续或不连续)(例如,氧化锌,氧化铝锌,氧化铟锡或氧化锡),其中使用陶瓷溅射靶溅射沉积TCO层,并且使用金属或基本金属溅射靶溅射相同材料的第二TCO层。这允许使用陶瓷靶形成通过陶瓷靶沉积较慢的膜的更好质量的TCO,而通过金属靶沉积膜的较低质量的TCO可以更快和更经济地沉积。 )。蚀刻后,大部分或所有质量较好的陶瓷沉积TCO保留下来,而在蚀刻过程中去除了膜中许多质量较差的金属沉积TCO。

著录项

  • 公开/公告号IN2011DN00717A

    专利类型

  • 公开/公告日2012-02-24

    原文格式PDF

  • 申请/专利权人

    申请/专利号IN717/DELNP/2011

  • 发明设计人 THOMSAN SCOTT V;LU YIWEI;KRASNOV ALEXEY;

    申请日2011-01-31

  • 分类号C23C14/00;H01L31/236;H01L31/224;H01L21/00;H01L31/00;H01L31/18;

  • 国家 IN

  • 入库时间 2022-08-21 17:24:12

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