首页> 外文期刊>Journal of Materials Chemistry: An Interdisciplinary Journal dealing with Synthesis, Structures, Properties and Applications of Materials, Particulary Those Associated with Advanced Technology >Effects of surface modification of indium tin oxide electrodes on the performance of molecular multilayer organic photovoltaic devices
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Effects of surface modification of indium tin oxide electrodes on the performance of molecular multilayer organic photovoltaic devices

机译:氧化铟锡电极的表面改性对分子多层有机光伏器件性能的影响

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摘要

We investigate the effects of surface modification of indium tin oxide (ITO) on the performance of organic multilayer molecular photovoltaic devices based on pentacene/C_(60) bi-layer heterojunctions. Values of the open-circuit voltage (V_(oc)), short circuit current density (J_(sc)), fill factor (FF), and power conversion efficiency (η) are found invariant of the work function and surface hydrophobicity of ITO. Insensitivity of these parameters to variations of work function in the range of 4.50 to 5.40 eV achieved through the use of surface modifiers are correlated with an invariance of the barrier height (~0.6 eV) due to Fermi level pinning at the ITO/pentacene interface. Energy barrier heights are extracted independently from the analysis of the electrical characteristics of single-layer diodes based on modified ITO and pentacene using an equivalent circuit model.
机译:我们研究了基于并五苯/ C_(60)双层异质结的铟锡氧化物(ITO)的表面改性对有机多层分子光伏器件性能的影响。发现开路电压(V_(oc)),短路电流密度(J_(sc)),填充系数(FF)和功率转换效率(η)的值是ITO的功函数和表面疏水性的常数。这些参数对通过使用表面改性剂实现的在4.50至5.40 eV范围内的功函数变化的不敏感性与由于ITO /并五苯界面处的费米能级钉扎导致的势垒高度不变性(〜0.6 eV)相关。通过使用等效电路模型,基于改进的ITO和并五苯,从单层二极管的电特性分析中独立提取能垒高度。

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