LOW LEAKAGE HIGH PERFORMANCE STATIC RANDOM ACCESS MEMORY CELL USING DUAL-TECHNOLOGY TRANSISTORS

摘要

A memory cell includes a storage element, a write circuit coupled to the storage element and a read circuit coupled to the storage element. At least a portion of the storage element and at least a portion of the write circuit are fabricated using a thicker functional gate oxide and at least a portion of the read circuit is fabricated using a thinner functional gate oxide.