首页> 外国专利> SEMICONDUCTOR TUNNEL-PREPARATION CONTAINING THE TUNNEL TOP BLOCK THEIR MULTIPLE DEVICES IN FAVOUR OF THE THERE ALSO APPLYING OF NANOMETER HIGH LIQUID HECHT-SUBSTANCE ON THE SUCCESSIVE, CONTINUED THROUGH AROUND moving SEMICONDUCTOR SUBSTRATE-SECTIONS.

SEMICONDUCTOR TUNNEL-PREPARATION CONTAINING THE TUNNEL TOP BLOCK THEIR MULTIPLE DEVICES IN FAVOUR OF THE THERE ALSO APPLYING OF NANOMETER HIGH LIQUID HECHT-SUBSTANCE ON THE SUCCESSIVE, CONTINUED THROUGH AROUND moving SEMICONDUCTOR SUBSTRATE-SECTIONS.

机译:包含隧道顶部的半导体隧道隔离装置,其多个装置的优点还在于,纳米级的高液体Hecht物质已成功地,连续地通过围绕移动的半导体物质的部分连续使用。

摘要

机译:

著录项

  • 公开/公告号NL1037192C

    专利类型

  • 公开/公告日2011-11-24

    原文格式PDF

  • 申请/专利权人 BOK EDWARD;

    申请/专利号NL20091037192

  • 发明设计人 BOK EDWARD;

    申请日2009-08-11

  • 分类号H01L21/677;

  • 国家 NL

  • 入库时间 2022-08-21 17:23:37

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