首页> 外国专利> SEMICONDUCTOR TUNNEL ESTABLISHMENT WHICH THE PLACE OF SUCCESSIVE SEMICONDUCTOR TREATMENT OF SUCCESSIVE traveling therethrough SEMICONDUCTOR SUBSTRATE-SECTIONS AND WHICH ALSO IN IT MORE STRIP-SHAPED MEDIUM FEED ESTABLISHMENTS IN AT LEAST THE TOP OF TUNNEL BLOCK WILL BE INCLUDED FOR A CONTINUOUS SUPPLY OF AT LEAST ALSO THE COMBINATION OF PARTICLES A CARRYING MEDIUM IN A GAS-SHAPED OR VAPORABLE LIQUID FORM.

SEMICONDUCTOR TUNNEL ESTABLISHMENT WHICH THE PLACE OF SUCCESSIVE SEMICONDUCTOR TREATMENT OF SUCCESSIVE traveling therethrough SEMICONDUCTOR SUBSTRATE-SECTIONS AND WHICH ALSO IN IT MORE STRIP-SHAPED MEDIUM FEED ESTABLISHMENTS IN AT LEAST THE TOP OF TUNNEL BLOCK WILL BE INCLUDED FOR A CONTINUOUS SUPPLY OF AT LEAST ALSO THE COMBINATION OF PARTICLES A CARRYING MEDIUM IN A GAS-SHAPED OR VAPORABLE LIQUID FORM.

机译:半导体隧道的建立,其中连续成功地处理穿过半导体基底部分的位置,并且在其中条形的介质需求至少在整个块状中都保持不变颗粒以气态或易挥发的液体形式结合携带的介质。

摘要

机译:

著录项

  • 公开/公告号NL1037473C2

    专利类型

  • 公开/公告日2011-11-24

    原文格式PDF

  • 申请/专利权人 BOK EDWARD;

    申请/专利号NL20091037473

  • 发明设计人 BOK EDWARD;

    申请日2009-11-17

  • 分类号H01L21/677;

  • 国家 NL

  • 入库时间 2022-08-21 17:23:37

相似文献

  • 专利
  • 外文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号