THERMOELECTRIC MATERIAL BASED ON EUTECTIC COMPOSITE OF Tl4SnSe4-Tl9BiSe6 SYSTEM

摘要

The invention relates to inorganic chemistry and semiconductor material engineering and can be used for practical use in manufacturing low-temperature of heat-to-electric energy converters, thermal cells, thermal batteries, thermogenerators etc. A thermoelectric material comprising nonathallium (I) hexaselenium bismuthite TlBiSein addition comprises thetratallium (I) tetraselenium stanumat TlSnSewith formation of eutectic composite (TlSnSe)(TlBiSe)The technical result is exhibiting higher value of thermo-emf in comparison to thermo-emf of initial compounds within 410-540 K temperature range. Value of the thermo-emf ratio of eutectic composite based on TlBiSeand TlSnSeunder the temperature of 540 K is 2350 mkV/grad that far exceeds analogical values of initial compounds.