Boron-rich boride composites were prepared by arc-melting in an argon atmosphere, and their microstructures and thermoelectric properties were studied. B/sub 4/C-TiB/sub 2/ system was quasi-binary, and the typical lamellar structures indicating a eutectic reaction were observed. The eutectic composition was 25 mol% TiB/sub 2/, and a 6 mol% TiB/sub 2/-B/sub 4/C composite showed the greatest ZT values of 0.55 at 1100 K. The boron-rich region of Si-B-C system contained a peritectic reaction. The specimens consisting of SiB/sub 14/, B/sub 4/C and free-Si were prepared. The greatest ZT value of this system was 0.4 at 1100 K for a specimen in which SiB/sub 14/ is the main phase with several 10 mol% of B/sub 4/C and free-Si.
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机译：通过在氩气氛中熔化制备富含硼的硼化物复合材料，研究了它们的微观结构和热电性能。 B / Sub 4 / C-Tib / sub 2 / System是准二元，并且观察到指示共晶反应的典型层状结构。共晶组合物为25mol％Tib / sub 2 /，6mol％Tib / sub 2 / sub / sub 4 / C复合材料显示出最大的Zt值为0.55，在1100k.富含硼的Si-区域BC系统含有包晶反应。制备由SIB / SUB 14 /，B / SUB 4 / C和自由Si组成的样品。该系统的最大ZT值为0.4，对于其中Sib / Sub 14 /是具有几种10mol％的B / Sub 4 / C和Free-Si的主阶段，该标本为1100k。
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