VARIABLE RESISTANCE NON-VOLATILE STORAGE ELEMENT, VARIABLE RESISTANCE NON-VOLATILE STORAGE DEVICE, AND MANUFACTURING METHOD FOR VARIABLE RESISTANCE NON-VOLATILE STORAGE ELEMENT

摘要

A variable resistance non-volatile storage element (10) is formed by layering a first electrode (101) formed from a material having a metal as the main component, a variable resistance layer (102) having a reversibly changeable resistance value depending on the application of predetermined electrical pulses having different polarities, a semiconductor layer (103) formed from a material having a nitrogen-deficient silicon nitride as the main component, and a second electrode (104). The variable resistance layer (102) is formed from a layered body of a first variable resistance layer (102a) and a second variable resistance layer (102b), the first variable resistance layer (102a) being adjacent to the first electrode (101), and the first variable resistance layer (102a) and the second variable resistance layer (102b) being formed from a material having an oxygen-deficient transition metal oxide as the main component. The oxygen content ratio of the first variable resistance layer (102a) is higher than the oxygen content ratio of the second variable resistance layer (102b). The layered body formed from the variable resistance layer (102), the semiconductor layer (103), and the second electrode (104) functions as a bidirectional diode element (106).