首页> 外国专利> HIGH-THROUGHPUT DEPOSITION SYSTEM FOR OXIDE THIN FILM GROWTH BY REACTIVE COEVAPORTATION

HIGH-THROUGHPUT DEPOSITION SYSTEM FOR OXIDE THIN FILM GROWTH BY REACTIVE COEVAPORTATION

机译:活性共沉淀法用于氧化物薄膜生长的高通量沉积系统

摘要

A heater for growing a thin film on substrates contained on a substrate support member (110) includes a plurality of heater elements (101). The substrate support member (110) containing the substrates is at least partially surrounded by the plurality of heater elements (101). At least two of the plurality of heater elements are moveable with respect to one another so as to provide external access to the substrate support member. An oxygen pocket is formed in one of the heater elements or a separate oxygen pocket member (108) and is used for oxidation of the film on the substrates.
机译:用于在容纳在基板支撑构件(110)上的基板上生长薄膜的加热器包括多个加热器元件(101)。包含基板的基板支撑构件(110)至少部分地被多个加热器元件(101)围绕。多个加热器元件中的至少两个相对于彼此可移动,以提供到基板支撑构件的外部通道。氧气袋形成在加热元件之一或单独的氧气袋构件(108)中,并用于氧化基板上的薄膜。

著录项

  • 公开/公告号EP1960566B1

    专利类型

  • 公开/公告日2012-01-04

    原文格式PDF

  • 申请/专利权人 SUPERCONDUCTOR TECH;

    申请/专利号EP20060850190

  • 申请日2006-11-22

  • 分类号C23C16/00;

  • 国家 EP

  • 入库时间 2022-08-21 17:17:04

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