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HEAVILY DOPED PbSe WITH HIGH THERMOELECTRIC PERFORMANCE

机译：具有高热电性能的重掺杂PbSe

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摘要

The present invention discloses heavily doped PbSe with high thermoelectric performance. Thermoelectric property measurements disclosed herein indicated that PbSe is high zT material for mid-to-high temperature thermoelectric applications. At 850 K a peak zT 1.3 was observed when n_Η ~ 1.0x 10²⁰ cm^-3. The present invention also discloses that a number of strategies used to improve zT of PbTe, such as alloying with other elements, nanostructuring and band modification may also be used to further improve zT in PbSe.

机译：本发明公开了一种具有高热电性能的重掺杂PbSe。本文公开的热电性质测量结果表明，PbSe是用于中高温热电应用的高zT材料。当 n _{H 〜1.0x 10 ^{20 cm ^{时，在850 K处观察到zT> 1.3的峰值。 -3 。本发明还公开了用于改善PbTe的zT的许多策略，例如与其他元素的合金化，纳米结构和能带修饰，也可以用于进一步改善PbSe中的zT。}}} 展开▼

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公开/公告号WO2012058340A2

专利类型

公开/公告日2012-05-03

原文格式PDF

申请/专利权人 CALIFORNIA INSTITUTE OF TECHNOLOGY;SNYDER G. JEFFREY;WANG HENG;PEI YANZHONG;
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申请/专利号WO2011US57933

发明设计人 SNYDER G. JEFFREY;WANG HENG;PEI YANZHONG;
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申请日2011-10-26

分类号H01L35/14;H01L35/16;H01L35/20;H01L35/34;

国家 WO

入库时间 2022-08-21 17:16:14

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