DEFECT-FREE GROUP III - NITRIDE NANOSTRUCTURES AND DEVICES BASED ON REPETITIVE MULTIPLE STEP GROWTH-ETCH SEQUENCE

摘要

Embodiments provide semiconductors including defect free Group III - Nitride nanostructures and uniform nanostructure arrays as well as processes for manufacturing, where features can be precisely controlled. A Repetitive Multiple Step Growth-Etch Sequence can be used to fabricate uniform Group III - Nitride semiconductor nanostructures and/or nanostructure arrays. Furthermore, core-shell nanostructure/MQW active structures can be formed by a core-shell growth on the non-polar sidewalls of each nanostructure and can be configured in nanoscale optoelectronic devices to provide very high efficiencies. Additional growth mode transitions between different Repetitive Multiple Step Growth-Etch Sequences or between a Repetitive Multiple Step Growth-Etch Sequence and conventional growth mode are employed in order to incorporate certain Group III - Nitride compounds into the nanostructures and form devices. In addition. Group III - Nitride substrate structures can be formed by coalescing Group III - Nitride nanostructures and/or nanostructure arrays to fabricate visible LEDs and lasers.