POLYCRYSTALLINE CUPROUS OXIDE NANOWIRE ARRAY PRODUCTION METHOD USING LOW-TEMPERATURE ELECTROCHEMICAL GROWTH

摘要

The present invention relates to a polycrystalline cuprous oxide nanowire array production method using low-temperature electrochemical growth, and more specifically relates not only to a production method allowing easy vapour deposition at low temperature but also to a polycrystalline cuprous oxide nanowire array production method using low-temperature electrochemical growth which retains such characteristics as large-area growth, high-crystallinity nanowire, uniform radial distribution, and easy length and radius adjustment. The present invention concerns a polycrystalline cuprous oxide nanowire array production method comprising the steps of: producing a nanopore alumina layer (anodised alumina, AAO) from a high-purity aluminium sheet (Al sheet) by using a two-step anodising method; and producing a polycrystalline cuprous oxide nanowire array by using the nanopore alumina layer as a nanomould.