首页> 外国专利> Mems device having support structures configured to minimize stress-related deformation and methods for fabricating same

Mems device having support structures configured to minimize stress-related deformation and methods for fabricating same

机译:具有被配置为最小化与应力有关的变形的支撑结构的记忆装置及其制造方法

摘要

Embodiments of MEMS devices include a movable layer supported by overlying support structures, and may also include underlying support structures. In one embodiment, the residual stresses within the overlying support structures and the movable layer are substantially equal. In another embodiment, the residual stresses within the overlying support structures and the underlying support structures are substantially equal. In certain embodiments, substantially equal residual stresses are obtained through the use of layers made from the same materials having the same thicknesses. In further embodiments, substantially equal residual stresses are obtained through the use of support structures and/or movable layers which are mirror images of one another.
机译:MEMS装置的实施例包括由上覆支撑结构支撑的可移动层,并且还可以包括下层支撑结构。在一实施例中,上覆支撑结构和可移动层内的残余应力基本相等。在另一个实施例中,上覆支撑结构和下覆支撑结构内的残余应力基本相等。在某些实施例中,通过使用由具有相同厚度的相同材料制成的层,可获得基本相等的残余应力。在另外的实施例中,通过使用彼此为镜像的支撑结构和/或可移动层,获得了基本上相等的残余应力。

著录项

  • 公开/公告号EP2497745A3

    专利类型

  • 公开/公告日2012-11-07

    原文格式PDF

  • 申请/专利权人 QUALCOMM MEMS TECHNOLOGIES INC.;

    申请/专利号EP20120170755

  • 发明设计人 ZHONG FAN;KOGUT LIOR;

    申请日2006-08-17

  • 分类号B81B3/00;G02B26/00;G02B26/08;B81C1/00;

  • 国家 EP

  • 入库时间 2022-08-21 17:11:53

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