METHOD FOR MEASURING THE TEMPERATURE OF A POWER SEMICONDUCTOR FOR OBTAINING THE RELATIVELY EXACT DETECTION BY PROVIDING A DIRECT ELECTRIC CONNECTION TO AN INNER-GATE RESISTANCE

摘要

PURPOSE: A method for measuring the temperature of a power semiconductor is provided to make an exact evaluation about the stress, lifetime and prognosis by satisfactorily making the detection of the temperature of a power semiconductor.;CONSTITUTION: A method for measuring the temperature of a power semiconductor comprises the following steps. A first controlling contact(22a) and a second controlling contact(22b) are connected through each bonding wire(16) to a first connection terminal(24a) and a second connect terminal(24b). The resistance value(Rv) of a serial resistance(14) is measured with the electric measurement between two connection terminals. The temperature(T) of the serial resistance is measured as the temperature of the power semiconductor(12) based on the resistance valued and temperature-resistance characteristic curve of the serial resistance.;COPYRIGHT KIPO 2012