MOS-semiconductor power component e.g. MOS power transistor, operating temperature measuring method, involves measuring electrical resistance of gate electrode, and determining temperature of power component from resistance

摘要

The method involves arranging contact points (8,9) at a preset distance to a gate electrode (4), and defining a clear electrically conductive measuring section (M2) between the contact points. An electrical resistance of the gate electrode is directly measured when operating a MOS-semiconductor power component with a gate voltage between the contact points by a measuring voltage superimpose the gate voltage. Temperature of the power component is determined from the electrical resistance. The gate electrode is divided into measuring sections with the contact points. An independent claim is also included for a method for measuring temperature-dependent resistances of gate electrodes.