首页> 外国专利> PROCESS FOR PRODUCING NEGATIVE ELECTRODE ACTIVE MATERIAL FOR NONAQUEOUS ELECTROLYTIC SECONDARY BATTERY, NEGATIVE ELECTRODE ACTIVE MATERIAL FOR NONAQUEOUS ELECTROLYTIC SECONDARY BATTERY, NEGATIVE ELECTRODE MATERIAL FOR NONAQUEOUS ELECTROLYTIC SECONDARY BATTERY, NEGATIVE ELECTRODE FOR NONAQUEOUS ELECTROLYTIC SECONDARY BATTERY, AND NONAQUEOUS ELECTROLYTIC SECONDARY BATTERY

PROCESS FOR PRODUCING NEGATIVE ELECTRODE ACTIVE MATERIAL FOR NONAQUEOUS ELECTROLYTIC SECONDARY BATTERY, NEGATIVE ELECTRODE ACTIVE MATERIAL FOR NONAQUEOUS ELECTROLYTIC SECONDARY BATTERY, NEGATIVE ELECTRODE MATERIAL FOR NONAQUEOUS ELECTROLYTIC SECONDARY BATTERY, NEGATIVE ELECTRODE FOR NONAQUEOUS ELECTROLYTIC SECONDARY BATTERY, AND NONAQUEOUS ELECTROLYTIC SECONDARY BATTERY

机译:用于生产非电解二次电池的负极活性物质的方法,用于非电解二次电池的负极活性物质,用于非电解电极的纳米电极的介电材料

摘要

PURPOSE: A producing method of a negative electrode active material for a nonaqueous electrolyte secondary cell, the negative electrode active material, a negative electrode member, a negative electrode, and the nonaqueous electrolyte secondary cell are provided to secure the high initial efficiency and battery capacity of silicon. CONSTITUTION: A producing method of a negative electrode active material for a nonaqueous electrolyte secondary cell comprises the following steps: precipitating silicon on a substrate with the temperature controlled at 300-800 deg C in a decompressed condition, by an evaporation process using a silicon material; crushing and distributing the precipitated silicon; and heating the silicon at 600-1,100 deg C. The crushing and distributing process is performed by a laser diffraction scattering-particle distribution measuring method.
机译:目的:提供用于非水电解质二次电池的负极活性材料的制造方法,负极活性材料,负极构件,负极和非水电解质二次电池,以确保高的初始效率和电池容量。硅。组成:一种非水电解质二次电池用负极活性物质的生产方法,包括以下步骤:通过使用硅材料的蒸发工艺,在减压下将温度控制在300-800摄氏度的基板上沉淀硅。 ;压碎并分布沉淀的硅;粉碎,分散工序是通过激光衍射散射粒子分布测定法进行的。

著录项

  • 公开/公告号KR20110128739A

    专利类型

  • 公开/公告日2011-11-30

    原文格式PDF

  • 申请/专利权人 SHIN-ETSU CHEMICAL CO. LTD.;

    申请/专利号KR20110048290

  • 发明设计人 NAKANISHI TETSUO;

    申请日2011-05-23

  • 分类号H01M4/38;C01B33/021;H01M4/139;H01M10/05;

  • 国家 KR

  • 入库时间 2022-08-21 17:11:34

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