首页> 外国专利> LIGHT EMITTING DEVICE CAPABLE OF GENERATING LIGHT WITH MULTI-FREQUENCIES OR MONO-FREQUENCY REDUCING PIEZOELECTRIC POLARIZED LIGHT DUE TO STRESS AND A MULTI-FREQUENCY LIGHT GENERATION METHOD

LIGHT EMITTING DEVICE CAPABLE OF GENERATING LIGHT WITH MULTI-FREQUENCIES OR MONO-FREQUENCY REDUCING PIEZOELECTRIC POLARIZED LIGHT DUE TO STRESS AND A MULTI-FREQUENCY LIGHT GENERATION METHOD

机译:具有多频率或单应力减少压电极化光的多波长或单频率产生光的发光装置及多频光产生方法

摘要

PURPOSE: A light emitting device and a multi-frequency light creating method are provided to suppress the generation of piezoelectric polarized light, thereby increasing optical efficiency of a wavelength of 500nm or longer.;CONSTITUTION: A first nitride semiconductor layer(13) is deposited on a substrate(10). A nano light emitting array(14) is located on the first nitride semiconductor layer. A plurality of nano light emitting parts(18) is arranged on the nano light emitting array. The nano light emitting part includes a base part(20), a first active layer(25), and a second nitride semiconductor layer(30). A dielectric pattern part is placed between the multiple nano light emitting parts.;COPYRIGHT KIPO 2012
机译:目的:提供一种发光器件和一种多频光产生方法,以抑制压电偏振光的产生,从而提高波长为500nm或更长的光学效率。组成:沉积第一氮化物半导体层(13)在基底(10)上。纳米发光阵列(14)位于第一氮化物半导体层上。多个纳米发光部分(18)布置在纳米发光阵列上。纳米发光部分包括基部(20),第一有源层(25)和第二氮化物半导体层(30)。介电图案部分放置在多个纳米发光部分之间。; COPYRIGHT KIPO 2012

著录项

  • 公开/公告号KR20110131801A

    专利类型

  • 公开/公告日2011-12-07

    原文格式PDF

  • 申请/专利权人 SAMSUNG ELECTRONICS CO. LTD.;

    申请/专利号KR20100051432

  • 发明设计人 KIM TAEK;

    申请日2010-05-31

  • 分类号H01L33/08;H01L33/22;

  • 国家 KR

  • 入库时间 2022-08-21 17:11:29

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