METHOD FOR FORMING A POLYCRYSTALLINE SILICON LAYER CAPABLE OF PREVENTING THE RESIDUE OF A CATALYST METAL AND A METHOD FOR FORMING A THIN FILM TRANSISTOR USING THE SAME

摘要

PURPOSE: A method for forming a polycrystalline silicon layer and a method for forming a thin film transistor using the same are provided to control a leakage current and leakage current dissemination of the thin film transistor by controlling the location and number of a grain boundary within the polycrystalline silicon.;CONSTITUTION: A buffer layer is formed on a substrate(S110). A catalyst metal layer is formed on the buffer layer(S120). A first amorphous silicon layer is formed on the catalyst metal layer(S130). A catalyst metal capping pattern is formed by patterning the first amorphous silicon layer(S140). The thermal process is executed in 300-500°C range. The catalyst metal layer which is formed on a domain except for the catalyst metal capping pattern is eliminated when patterning the first amorphous silicon layer. A second amorphous silicon layer is formed on the catalyst metal capping pattern and the buffer layer(S150). The second amorphous silicon layer is crystallized by a thermal process(S160).;COPYRIGHT KIPO 2012