首页> 外国专利> METHOD OF DEPOSITING AMORPHOUS HYDROCARBON NITRIDE(A-CN:HX) FILM, ORGANIC EL DEVICE, AND PROCESS FOR PRODUCING SAME

METHOD OF DEPOSITING AMORPHOUS HYDROCARBON NITRIDE(A-CN:HX) FILM, ORGANIC EL DEVICE, AND PROCESS FOR PRODUCING SAME

机译:沉积非晶态氮化氢(A-CN:HX)膜,有机EL装置的方法及其生产方法

摘要

A method in which a high-density plasma having a relatively low electron temperature is used to stably form an a-CN:Hx film containing carbon-nitrogen (C-N) bonds and having few defects and satisfactory properties using, as a feed gas, a hydrocarbon compound containing a carbon-nitrogen (C-N) bond. Provided is an organic device including an a-CN:Hx film. A hydrocarbon compound containing a C-N bond and either nitrogen or ammonia are used as feed gases to deposit a luminescent layer. A hole injection/transportation layer is formed on the underside of the luminescent layer, and an electron injection layer is formed on the upperside of the luminescent layer. Thus, an organic device including an amorphous hydrocarbon nitride (a-CN:Hx) film as the luminescent layer is obtained.
机译:一种方法,其中使用具有较低电子温度的高密度等离子体来稳定地形成a-CN:Hx膜,该膜包含碳-氮(CN)键并且几乎不具有缺陷和令人满意的性能,使用a作为进料气含有碳氮(CN)键的碳氢化合物。提供了一种包括a-CN:Hx膜的有机器件。包含C-N键和氮或氨的烃化合物用作进料气以沉积发光层。空穴注入/传输层形成在发光层的下侧,并且电子注入层形成在发光层的上侧。因此,获得了包括非晶碳氮化物(a-CN:Hx)膜作为发光层的有机器件。

著录项

  • 公开/公告号KR20110138373A

    专利类型

  • 公开/公告日2011-12-27

    原文格式PDF

  • 申请/专利权人 TOKYO ELECTRON LIMITED;

    申请/专利号KR20117023946

  • 发明设计人 ISHIKAWA HIRAKU;

    申请日2010-03-11

  • 分类号C09K11/06;C23C16/34;H01L51/56;

  • 国家 KR

  • 入库时间 2022-08-21 17:11:17

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