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Gadolinium oxide insulator film containing different Rare earth elements and Preparing method thereof

机译:含不同稀土元素的氧化oxide绝缘膜及其制备方法

摘要

This invention relates to gadolinium oxide insulating film and a process for the preparation thereof , are explained more specifically in isolation characteristic by addition to the good oxidation will add a heterologous ( ) a rare earth element in gadolinium- enhanced and the insulating property of the insulating film for a specific emission spectrum , and also relates to a method for producing such an insulating film by using a non- vacuum system of the spin coating method will . Gadolinium oxide insulating film of the present invention can be applied usefully in the insulating film such as the thin-film transistor , the manufacturing method presented in this invention is applicable to a large display electronic devices by using a spin coating method, a non- vacuum deposition method . ;
机译:氧化insulating绝缘膜及其制备方法本发明涉及氧化isolation绝缘膜及其制备方法,在隔离特性方面进行了详细的说明,除了具有良好的氧化作用外,还添加了异质()稀土元素增强了ado的绝缘性能。用于特定发射光谱的薄膜,并且还涉及通过使用旋涂法的非真空系统制造这种绝缘膜的方法。本发明的氧化d绝缘膜可以有效地应用于诸如薄膜晶体管的绝缘膜中,本发明提出的制造方法可以通过使用旋涂法,非真空法应用于大型显示​​电子设备。沉积法。 ;

著录项

  • 公开/公告号KR101086041B1

    专利类型

  • 公开/公告日2011-11-22

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20100030080

  • 发明设计人 박병윤;정하균;최성호;

    申请日2010-04-01

  • 分类号H01B3/10;H01B3/30;

  • 国家 KR

  • 入库时间 2022-08-21 17:11:06

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