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Low Noise Amplifier and Integrated Circuit Device for Low Noise Amplifier

机译:低噪声放大器和用于低噪声放大器的集成电路装置

摘要

PURPOSE: A low noise amplifier and low noise amplifier integrated circuit device are provided to control the amplification degree of a low noise amplifier integrated circuit device by using an external device. CONSTITUTION: A low noise amplifier integrated circuit device(200) includes a plurality of capacitors and a plurality of inductors. The inductor performs a function for blocking the inflow of a radio frequency signal to a bias input unit(218). The bias input unit inputs the bias voltage from the outside. The inputted bias voltage is applied to an amplification module, a first switching module, and a second switching module. The second switching module conducts an electrical path between an RF out port(216) and a second outer port(212). The first switching module conducts the electrical path between a bypass line and an RF input port. The bias input part is connected to the anode of the first diode. One end of the bypass line is connected to the cathode of the second diode.
机译:目的:提供了一种低噪声放大器和低噪声放大器集成电路器件,以通过使用外部设备来控制低噪声放大器集成电路器件的放大程度。构成:一种低噪声放大器集成电路装置(200),包括多个电容器和多个电感器。电感器执行用于阻止射频信号流入偏置输入单元(218)的功能。偏置输入单元从外部输入偏置电压。输入的偏置电压被施加到放大模块,第一开关模块和第二开关模块。第二开关模块在RF输出端口(216)和第二外部端口(212)之间传导电路径。第一开关模块传导旁路线和RF输入端口之间的电气路径。偏置输入部分连接到第一二极管的阳极。旁路线的一端连接到第二二极管的阴极。

著录项

  • 公开/公告号KR101094538B1

    专利类型

  • 公开/公告日2011-12-19

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20100007760

  • 发明设计人 송형석;이재경;박진상;

    申请日2010-01-28

  • 分类号H03F1/02;H03F3/60;

  • 国家 KR

  • 入库时间 2022-08-21 17:11:00

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