A UNIT PICTURE ELEMENT INCLUDING A PHOTODIODE INCLUDING A LIGHT ANTI-ABSORPTION LAYER FORMED THEREON, BACK-SIDE ILLUMINATION CMOS IMAGE SENSOR INCLUDING THE UNIT PICTURE ELEMENT

摘要

PURPOSE: A unit pixel and a backside illumination complementary metal oxide semiconductor image sensor including the same are provided to an improve trade off relation of sensitivity about white spot and light. CONSTITUTION: A photo diode(120) is formed on the upper side of a wiring layer(110). An optical absorption blocking layer(130) is formed on the upper side of the photo diode. An anti-reflection layer(140) is formed on the upper side of the optical absorption blocking layer. A color filter(150) is formed on the upper side of the anti-reflection layer. A micro lens(160) is formed on the upper side of the color filter. The anti-reflection layer is formed into a compound semiconductor in which energy band gap is bigger than a semiconductor which constitutes the photo diode. A visible ray passes through the compound semiconductor.