METHOD FOR FORMING A BURIED BIT LINE OF A VERTICAL TYPE TRANSISTOR CAPABLE OF IMPROVING A CONTACT FEATURE BETWEEN THE BURIED BIT LINE AND A DRAIN REGION

摘要

PURPOSE: A method for forming the buried bit line of a vertical type transistor is provided to reduce constant resistance by forming a selective epitaxial growth film to be projected than a single sidewall contact hole and increasing a contact area.;CONSTITUTION: A trench(215) is formed within a semiconductor substrate(200). A sidewall film(220) is formed in the active area(210) of a pillar shape and the exposing side of a trench. An open area in which one bottom side of the active area is selectively exposed is formed. An SRG(Selective Epitaxial Growth) film(250) is formed on the open area. A barrier metal film is formed on the semiconductor substrate which includes the active area. A buried bit line(275) is formed on a bit line metal layer by executing an etch back process.;COPYRIGHT KIPO 2012