首页> 外国专利> LIGHT EMITTING DIODE HAVING IMPROVED OPTICAL EXTRACTION EFFICIENCY CAPABLE OF REDUCING LIGHT LOSS BY AN ELECTRODE PAD

LIGHT EMITTING DIODE HAVING IMPROVED OPTICAL EXTRACTION EFFICIENCY CAPABLE OF REDUCING LIGHT LOSS BY AN ELECTRODE PAD

机译:发光二极管具有提高的光学萃取效率,可降低电极垫的光损耗

摘要

PURPOSE: A light emitting diode having improved optical extraction efficiency is provided to prevent a current to be excessively focused on the crystal defect of light emission regions by partitioning a light-emitting structure into a plurality of light emitting regions.;CONSTITUTION: A light-emitting structure including light emitting regions(LE1,LE2) is formed in the top of a substrate. The light-emitting structure comprises a first electrical conductive semiconductor layer, an active layer, and a second electrical conductive semiconductor layer. A first electrode pad(35) is electrically connected to the first electrical conductive semiconductor layer. A second electrode pad(33) is located on the upper side of the substrate. An insulation reflecting layer(31) separates the second electrode pad from the light-emitting structure. A pattern(LEE) of optical extraction elements is located on the upper side of the second electrical conductive semiconductor layer.;COPYRIGHT KIPO 2012
机译:目的:提供一种具有改进的光提取效率的发光二极管,以通过将发光结构划分为多个发光区域来防止电流过分聚焦在发光区域的晶体缺陷上。在基板的顶部形成包括发光区域(LE1,LE2)的发光结构。发光结构包括第一导电半导体层,有源层和第二导电半导体层。第一电极焊盘(35)电连接到第一导电半导体层。第二电极焊盘(33)位于基板的上侧。绝缘反射层(31)将第二电极焊盘与发光结构分开。光提取元件的图案(LEE)位于第二导电半导体层的上侧。; COPYRIGHT KIPO 2012

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