PHOTORESIST INCLUDING MULTIPLE AMIDE COMPONENTS CAPABLE OF BEING USED FOR IMMERSION LITHOGRAPHY PRODUCTS AND A METHOD FOR FORMING A PHOTO-SENSITIVE EMBOSSED IMAGE USING THE SAME

摘要

PURPOSE: A photoresist including multiple amide components and a method for forming a photo-sensitive embossed image using the same are provided to reduce the undesirable diffusion of photo-generated acid to the outside of a non-exposed region in a photoresist coating layer.;CONSTITUTION: A composition for photoresist includes one or more resins, one or more photoacid generator compounds, and one or more multiple amide compounds. The multiple amide compounds are non-polymeric or polymeric. The molecular weight of each multiple amide compound is less than 2000. The multiple amide compounds include one or more parts selected from hydroxyl, carboxyl, carboxy (C1-C30) alkyl, (C1-C30) alkoxy, sulfonyl, sulfonic acid, sulfonate ester, cyano, halo, and keto. The multiple amide compounds include 2 to 6 amide groups. At least one of the multiple amide compounds are represented by chemical formula I. In chemical formula I, the R1 to the R3 are selected from H, (C1-C30) alkyl, amido-substituted (C1-C30) alkyl; the R1 and the R2 or the R1 and the R3 are capable of forming 5 to 12 heterocyclic ring; and at least one of the R1, the R2, and the R3 are amido-substituted (C1 to C30) alkyl.;COPYRIGHT KIPO 2012