首页> 外国专利> COMPOSITION FOR FORMING RESIST LOWER LAYER FILM, POLYMER, RESIST LOWER LAYER FILM, PROCESS FOR FORMING PATTERN AND PROCESS FOR MANUFACTURING SEMICONDUCTOR DEVICE

COMPOSITION FOR FORMING RESIST LOWER LAYER FILM, POLYMER, RESIST LOWER LAYER FILM, PROCESS FOR FORMING PATTERN AND PROCESS FOR MANUFACTURING SEMICONDUCTOR DEVICE

机译:形成下阻膜的组合物,聚合物,下阻膜的成膜剂,形成图案的过程和制造半导体器件的过程

摘要

PURPOSE: A composition for forming a resist sub layer, polymer, a resist sub layer, a patter forming method, and a semiconductor device manufacturing method are provided to improve the etching speed of a pattern forming process based on a dry etching technique. CONSTITUTION: A composition for forming a resist sub layer includes polymer with a cyclic carbonate structure. A method for forming patterns includes the following: the resist sub layer is formed by applying the composition on a substrate; a resist layer is formed by applying a resist composition on the resist sub layer; the resist layer is exposed by selectively irradiating radiation using a photo mask; the exposed resist layer is developed to form resist patterns; the resist patterns are used as a mask for dry etching the resist sub layer and the substrate to form patterns.
机译:用途:提供用于形成抗蚀剂子层的组合物,聚合物,抗蚀剂子层,图案形成方法和半导体器件制造方法,以提高基于干蚀刻技术的图案形成工艺的蚀刻速度。构成:用于形成抗蚀剂子层的组合物包括具有环状碳酸酯结构的聚合物。形成图案的方法包括以下步骤:通过在基板上涂覆组合物来形成抗蚀剂子层;通过在抗蚀剂子层上施加抗蚀剂组合物来形成抗蚀剂层。通过使用光掩模选择性地辐射辐射来暴露抗蚀剂层;曝光的抗蚀剂层被显影以形成抗蚀剂图案。抗蚀剂图案用作掩模,以干法蚀刻抗蚀剂子层和基板以形成图案。

著录项

  • 公开/公告号KR20120033268A

    专利类型

  • 公开/公告日2012-04-06

    原文格式PDF

  • 申请/专利权人 JSR CORPORATION;

    申请/专利号KR20110098200

  • 发明设计人 NAKAHARA KAZUO;NAGAI TOMOKI;

    申请日2011-09-28

  • 分类号G03F7/11;G03F7/26;H01L21/027;

  • 国家 KR

  • 入库时间 2022-08-21 17:10:18

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