首页> 外国专利> MAGNETIC TUNNEL JUNCTION CELLS FOR HAVING PERPENDICULAR ANISOTROPY WHICH HAS PERPENDICULARITY OR THE OUT-OF-PLANE MAGNETIC ORIENTATION AND AN ENHANCEMENT LAYER

MAGNETIC TUNNEL JUNCTION CELLS FOR HAVING PERPENDICULAR ANISOTROPY WHICH HAS PERPENDICULARITY OR THE OUT-OF-PLANE MAGNETIC ORIENTATION AND AN ENHANCEMENT LAYER

机译:具有垂直各向异性或平面外磁场定向和增强层的垂直各向异性的磁性隧道结单元

摘要

PURPOSE: Magnetic tunnel junction cells for having perpendicular anisotropy are provided to improve high areal density having increased tolerance against process variables by allowing a reduced switching current having thermal stability.;CONSTITUTION: A magnetic tunnel junction cell(100) includes a ferromagnetic free layer(110) and a ferromagnetic reference layer(140). An oxide barrier layer(130) is placed between the ferromagnetic reference layer and the ferromagnetic free layer. The ferromagnetic reference layer and the ferromagnetic free layer are separated by the oxide barrier layer or a non-magnetic tunnel barrier. An enhancement layer(120) is placed to be contiguous to the oxide barrier layer and the ferromagnetic free layer. The ferromagnetic free layer, the ferromagnetic reference layer, and the enhancement layer have related magnetization orientation.;COPYRIGHT KIPO 2012
机译:用途:提供具有垂直各向异性的磁性隧道结电池,以通过降低具有热稳定性的开关电流来提高对工艺变量的耐受性的高面密度;组成:磁性隧道结电池(100)包括铁磁自由层( 110)和铁磁参考层(140)。氧化物阻挡层(130)被放置在铁磁参考层和铁磁自由层之间。铁磁性参考层和铁磁性自由层被氧化物阻挡层或非磁性隧道阻挡层隔开。增强层(120)被放置为与氧化物阻挡层和铁磁自由层相邻。铁磁自由层,铁磁参考层和增强层具有相关的磁化方向。; COPYRIGHT KIPO 2012

著录项

  • 公开/公告号KR20120046085A

    专利类型

  • 公开/公告日2012-05-09

    原文格式PDF

  • 申请/专利权人 SEAGATE TECHNOLOGY LLC;

    申请/专利号KR20110112327

  • 发明设计人 ZHENG YUANKAI;GAO ZHENG;JUNG WON JOON;

    申请日2011-10-31

  • 分类号H01L43/02;

  • 国家 KR

  • 入库时间 2022-08-21 17:10:07

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