SOLID-STATE IMAGE SENSOR, A MANUFACTURING METHOD THEREOF, AND AN IMAGING SYSTEM CAPABLE OF IMPROVING A PHOTOELECTRIC CONVERSION PROPERTY

摘要

PURPOSE: A solid state image sensor, a manufacturing method thereof and an imaging system are provided to reduce manufacturing costs by using an insulation layer as an anti-reflection layer and an etch stopper of a contact.;CONSTITUTION: A solid image sensor includes a pixel area(111) and a peripheral circuit area. A signal processing circuit(112) includes a circuit for amplifying a signal read from the pixel area. A vertical shift register(113) drives a pixel arranged in the pixel area. A horizontal shift register(114) drives the signal processing circuit. The signal processing circuit, the vertical shift register, and the horizontal shift register are arranged in the peripheral circuit area.;COPYRIGHT KIPO 2012