首页> 外国专利> INFRARED LASER APPARATUS CAPABLE OF FORMING A MICROCRYSTAL SILICON LAYER AND A METHOD OF FABRICATING AN ARRAY SUBSTRATE USING THE SAME

INFRARED LASER APPARATUS CAPABLE OF FORMING A MICROCRYSTAL SILICON LAYER AND A METHOD OF FABRICATING AN ARRAY SUBSTRATE USING THE SAME

机译:能够形成微晶硅层的红外激光装置及其制造阵列基质的方法

摘要

PURPOSE: An infrared laser apparatus and a method of fabricating an array substrate using the same are provided to improve reliability since a mask for line beams is formed by coating copper on a silicon wafer.;CONSTITUTION: A first insulation layer is formed on an upper portion of a gate electrode(112). A heat conversion layer is formed on the upper portion of an amorphous silicon layer. A microcrystal silicon layer is formed by irradiating the heat conversion layer with infrared lasers of a line beam form and crystallizing the amorphous silicon layer. The microcrystal silicon layer is patterned and an active layer(116) is formed. An ohmic contact layer(120) is formed on the upper portion of the active layer. Source and drain electrodes(122, 124) are formed on the upper portion of the ohmic contact layer.;COPYRIGHT KIPO 2012
机译:目的:提供一种红外线激光设备和使用其制造阵列基板的方法,以提高可靠性,因为通过在硅晶片上涂覆铜来形成用于线束的掩模。;组成:在上部形成第一绝缘层栅电极(112)的一部分。在非晶硅层的上部上形成有热转换层。通过用线束形式的红外激光照射热转换层并使非晶硅层结晶来形成微晶硅层。对微晶硅层进行构图并形成有源层(116)。在有源层的上部上形成欧姆接触层(120)。源极和漏极(122、124)形成在欧姆接触层的上部。; COPYRIGHT KIPO 2012

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