ETCHING-TYPE RESONANCE ENERGY TRANSFER LIGHT EMITTING DIODES CAPABLE OF INCREASING ENERGY CONVERSION EFFICIENCY

摘要

PURPOSE: An etching-type resonance energy transfer light emitting diode is provided to increase color reproducibility by using a semiconductor quantum dot as a color converter.;CONSTITUTION: An n-GaN layer, active layer, p-GaN layer, and transparent electrode layer(14) are successively grown on a substrate(10). An n-pad is connected to the n-GaN layer. A p-pad is connected to the transparent electrode layer. Micro and nano hole patterns are formed on the transparent electrode layer. The micro and nano hole are formed by etching layers from the p-GaN layer to n-GaN layer.;COPYRIGHT KIPO 2012