PLASMA-NITRIDING METHOD FOR IMPROVING ETCHING RESISTANCE CHARACTERISTICS OF A SILICON NITRIDE LAYER

摘要

PURPOSE: A plasma-nitriding method is provided to form a silicon nitride layer with improved compactness by reforming the silicon nitride layer at a temperature below film growth temperature with nitrogen-containing plasma.;CONSTITUTION: A processing container has an opening on the top thereof. A loading table(2) loads a processed object(W) having a silicon nitride layer within the processing container. A heating means(5) heats the processed object. A microwave transmissive plate(28) simultaneously transmits microwaves and blocking an opening of the processing container. A gas introduction portion(15) introduces process gas within the processing container. An exhaust unit(24) exhausts the inside of the processing container.;COPYRIGHT KIPO 2013;[Reference numerals] (19a) Inert gas supply source; (19b) Gas supply source containing nitrogen; (24) Exhaust device; (38) Microwave generation device; (39) Matching circuit; (50) Control unit; (5a) Heater power supply; (6) Thermoelement