METHOD FOR MANUFACTURING A PATTERNED SAPPHIRE SUBSTRATE FOR A LIGHT EMITTING DIODE CAPABLE OF IMPROVING AN ETCHING SPEED OF A MASK LAYER

摘要

PURPOSE: A method for manufacturing a patterned sapphire substrate for a light emitting diode is provided to improve the luminous efficiency of a light emitting diode by forming a pattern with a sharp top part on the sapphire substrate.;CONSTITUTION: UV curable resins are coated on a mold with a preset pattern(S20). A UV curable resin layer with a transferred mold pattern is formed by compressing a sapphire substrate and the mold(S30). UV is emitted when the sapphire substrate and the mold are compressed(S40). A mask layer with the transferred mold pattern is formed on the sapphire substrate(S50). A pattern with a sharp top part is formed on the sapphire substrate by ion-etching the sapphire substrate until the mask layer is removed(S60).;COPYRIGHT KIPO 2013;[Reference numerals] (S10) Preparing mold; (S20) Coating mold with UV curable resin; (S30) Compressing a sapphire substrate and a mold; (S40) Emitting UV; (S50) Forming a mask layer; (S60) Ion etching; (S70) Thermal curing at high temperature