QUARTZ CRUCIBLE FOR GROWING A SILICON CRYSTAL AND A COATING METHOD THEREOF CAPABLE OF PREVENTING DAMAGE TO A QUARTZ CRUCIBLE DUE TO REPETITIVE USE

摘要

PURPOSE: A quartz crucible for growing silicon crystal and a coating method thereof are provided to maintain the diameter of pinholes small enough by not including bubble on a quartz layer on which a devitrified coating is formed.;CONSTITUTION: A bubble-free quartz layer is formed on the inner side of a quartz crucible for growing a silicon crystal. The thickness of the bubble-free quartz layer is 80um to 4mm. The surface of the bubble-free quartz layer is covered with alkaline earth hydroxide. The surface of the bubble-free quartz layer is heated over a temperature at which the surface becomes devitrified.;COPYRIGHT KIPO 2013