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Method for manufacturing high density SiCf/SiC composites

机译:高密度SiCf / SiC复合材料的制造方法

摘要

PURPOSE: A method for manufacturing high density SiCf/SiC composites is provided to obtain SiCf/SiC having high density of 3.13g/cm^3. CONSTITUTION: Binder is dissolved in solvent, and is a PVB(Polyvinyl Butyral) molecular weight 55,000 g/mol. Plasticizer and dispersing agent are added to the mixture, and a binder solution is manufactured. SiC powers are added to the binder solution. The SiC powders have particles of which average is size 52nm and -SiC powders of which non surface area is 80 m^2/g. A SiC slurry is fabricated, and a weaving fiber is dipped in the SiC slurry.
机译:目的:提供一种高密度SiCf / SiC复合材料的制备方法,以得到高密度为3.13g / cm ^ 3的SiCf / SiC。组成:粘合剂溶解在溶剂中,其PVB(聚乙烯醇缩丁醛)分子量为55,000 g / mol。将增塑剂和分散剂添加到混合物中,并制造粘合剂溶液。将SiC粉末添加到粘合剂溶液中。 SiC粉末具有平均尺寸为52nm的颗粒和非表面积为80m 2 / g的-SiC粉末。制造SiC浆料,并将编织纤维浸入SiC浆料中。

著录项

  • 公开/公告号KR101101244B1

    专利类型

  • 公开/公告日2012-01-04

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20090042051

  • 发明设计人 김원주;윤당혁;이종현;박지연;

    申请日2009-05-14

  • 分类号D06M11/77;D06M11/73;

  • 国家 KR

  • 入库时间 2022-08-21 17:08:50

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