Silicon-Containing Film Forming Compsition, Silicon-Containing Film Serving as Etching Mask, Substrate Processing Intermediate, and Substrate Processing Method

摘要

The present invention, in the lower layer film, and then a silicon formed containing film, a photoresist film thereon further on, the silicon-containing film forming composition used in the multi-layer resist method for performing etching of a single-layer intermediate film on a processed substrate relates to a hydrolyzable silane alone or a mixture of hydrolysis of silicon-containing composition for the etching mask of silicon-containing film formed for containing a polymer obtained by condensation of containing a silane compound having a silicon-bonded-, to silicon represented by the formula (1). ; Formula 1 ; R _(6-m) Si ₂ X _m; (Wherein in the formula, R is a monovalent hydrocarbon group, X is an alkoxy group, an alkanoyloxy group or a halogen atom, m is a 6≥m≥3.) ; The compositions of the present invention may have a photoresist formed thereon to form a good pattern, high etch selectivity between the organic material is obtained. ; Etching mask, the silicon-containing film, a lower layer film, a photoresist