PURPOSE: A silicon monocrystal ingot forming apparatus comprised of a double guider is provided to suppress vibrations delivered through a wire and minimize a swing effect, thereby minimizing faults in product production by a warped rotation axis from silicon monocrystal ingot growing. CONSTITUTION: A crucible(110) contains a silicon solution. A reaction chamber(100) includes a heater and a heat shield. The heater heats the crucible and is surrounded by the heat shield. The heat shield blocks the heat generated from the heater. A chamber ascending/descending unit(200) is comprised of a support stand, a shaft axis(210), and a driving part and ascends/descends/rotates the reaction chamber in one direction. The shaft axis is connected to the support stand which is supporting the reaction chamber. A wire pulling unit(300) winds and pulls a wire by a motor and rotates the wire in opposite direction to a rotating direction of the reaction chamber. A seed connection chuck in the lower end part of the wire is installed in the upper part of the reaction chamber. A seed crystal which is raising a monocrystal ingot is connected to the seed connection chuck. A wire maintenance part(400) has a double guider structure which is separated with a fixed interval in up and down following the wire length direction. The wire maintenance part is fixed in the support stand in order to be located between the wire pulling unit and the reaction chamber. A jig hole where the wire is passing through is formed at each center of guider and prevents shaking when pulling or rotating the wire.
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