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FABRICATING METHOD FOR THIN FLIM TRANSISTER SUBSTRATE AND THIN FLIM TRANSISTER SUBSTRATE USING THE SAME
FABRICATING METHOD FOR THIN FLIM TRANSISTER SUBSTRATE AND THIN FLIM TRANSISTER SUBSTRATE USING THE SAME
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机译:使用相同的薄膜晶体管基板和薄膜晶体管基板的制造方法
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摘要
A thin film transistor substrate and its fabrication method are discussed. According to an embodiment, the fabricating method of a thin film transistor substrate includes forming a gate electrode on a substrate; forming a gate insulating film on the gate electrode, the gate insulating film having a groove in an area corresponding to an area where an active layer of a thin film transistor is to be formed; forming the active layer of the thin film transistor by use of a nanowire in the groove of the gate insulating film; and forming a source electrode and a drain electrode on the active layer.
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