A POLYCRYSTALLINE SILICON THIN FILM TRANSISTOR AND A FABRICATING METHOD WITH THE SAME AND A POLYCRYSTALLINE SILICON THIN FILM TRANSISTOR PALTE WITH THE SAME

摘要

A polycrystalline silicon thin film transistor, a method for fabricating the same, and a polycrystalline silicon thin film transistor plate with the same are provided to reduce an off current of the transistor by forming at least one through-hole in an active layer. A polycrystalline silicon thin film transistor includes a channel region having at least two grains. The channel region has at least one through-hole which is formed in a longitudinal direction of the channel region, so that the through-hole is formed between two grains. A source contact region(130) is formed opposite to a drain contact region(140), with the channel region being interposed between the source contact region and the drain contact region. A gate electrode is interposed between the channel region and the gate insulation film. A source electrode is connected to the source contact region.