TRANSISTOR DEVICE HAVING AN INCREASED THRESHOLD STABILITY WITHOUT DRIVE CURRENT DEGRADATION

摘要

by removing a portion of the halo region (206, 306) , or re-growth of semiconductor material (218 , 318) by avoiding the formation on the basis of the halo region (206, 306) in the extended area (209A) that may be formed subsequently , the critical roll -off operation can be improved significantly , in which the current driving capability is achieved at the same time enhanced can be .